Internal Quantum Efficiency of Led Structures at Various Charge Carrier Distributions Over InGaN/GaN Quantum Wells


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Resumo

The results of studying the effect of the thickness of GaN barrier layers in the active region of LED structures with InGaN/GaN quantum wells on the internal quantum efficiency (IQE) of photoluminescence are presented. It is shown that a decrease in the thickness of the GaN barrier layers from 15 to 3 nm leads to an increase in the maximum value of IQE and to a shift of the maximum to the region of high excitation powers. The result obtained is explained with consideration for the decrease in the Auger recombination rate due to a more uniform distribution of charge carriers over the active region in structures with a barrier thickness of 3 nm.

Sobre autores

I. Romanov

National Research Tomsk State University

Autor responsável pela correspondência
Email: rff.romis@gmail.com
Rússia, Tomsk

I. Prudaev

National Research Tomsk State University

Email: rff.romis@gmail.com
Rússia, Tomsk

V. Kopyev

National Research Tomsk State University

Email: rff.romis@gmail.com
Rússia, Tomsk

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