Synthesis of Polycrystalline CdSiP 2  in a Gradient Temperature Field

S. A. Bereznaya; Z. V. Korotchenko; A. S. Kurasova; S. Yu. Sarkisov; Yu. S. Sarkisov; A. I. Chernyshov; I. V. Korolkov; B. M. Kuchumov; A. I. Saprykin; V. V. Atuchin

doi:10.1007/s11182-018-1384-8

Synthesis of Polycrystalline CdSiP₂ in a Gradient Temperature Field

Авторы: Bereznaya S.A.¹, Korotchenko Z.V.¹, Kurasova A.S.¹, Sarkisov S.Y.¹, Sarkisov Y.S.², Chernyshov A.I.¹, Korolkov I.V.³^,4, Kuchumov B.M.³, Saprykin A.I.³^,4, Atuchin V.V.⁴^,5
Учреждения:
1. National Research Tomsk State University
2. Tomsk State University of Architecture and Building
3. Nikolaev Institute of Inorganic Chemistry of the Siberian Branch of the Russian Academy of Sciences
4. National Research Novosibirsk State University
5. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Выпуск: Том 61, № 1 (2018)
Страницы: 191-195
Раздел: Article
URL: https://bakhtiniada.ru/1064-8887/article/view/240114
DOI: https://doi.org/10.1007/s11182-018-1384-8
ID: 240114

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Аннотация

A procedure for the synthesis of a CdSiP₂ compound from the initial elementary components in a gradient thermal field has been developed. The phase and chemical composition of the synthesized and recrystallized material is confirmed by the data of X-ray diffraction analysis and scanning electron microscopy with an energy-dispersive system. The polycrystalline material obtained by the developed method will be used to grow bulk nonlinear optical CdSiP₂ crystals.