Angular Distributions of Plasma Flows in a Vacuum Arc with Boride Cathodes
- 作者: Nikolaev A.G.1, Oks E.M.1,2, Frolova V.P.1,2, Jushkov G.Y.1
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隶属关系:
- Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
- Tomsk State University of Control Systems and Radioelectronics
- 期: 卷 60, 编号 9 (2018)
- 页面: 1528-1532
- 栏目: Article
- URL: https://bakhtiniada.ru/1064-8887/article/view/239320
- DOI: https://doi.org/10.1007/s11182-018-1246-4
- ID: 239320
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详细
Results of investigation of the angular distribution and mass-to-charge fractions of the ion flow generated in a pulsed vacuum arc with lanthanum hexaboride and boron carbide cathodes are presented. It is shown that the discharge with such cathodes provides efficient generation of the plasma with a high fraction of boron ions with charge states from 1+ to 3+ whose total fraction is determined by the fraction of the boron atoms in the cathode material. The angular distributions of ions in the plasma flow depend on the relationship between the masses of components of cathode materials: in the case of lanthanum hexaboride cathode, the distribution of boron ions is wider than that of lanthanum ions, and in the case of boron carbide cathode, the boron and carbon ion distributions are practically identical.
作者简介
A. Nikolaev
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
编辑信件的主要联系方式.
Email: nik@opee.hcei.tsc.ru
俄罗斯联邦, Tomsk
E. Oks
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences; Tomsk State University of Control Systems and Radioelectronics
Email: nik@opee.hcei.tsc.ru
俄罗斯联邦, Tomsk; Tomsk
V. Frolova
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences; Tomsk State University of Control Systems and Radioelectronics
Email: nik@opee.hcei.tsc.ru
俄罗斯联邦, Tomsk; Tomsk
G. Jushkov
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: nik@opee.hcei.tsc.ru
俄罗斯联邦, Tomsk
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