Properties of Resistive Hydrogen Sensors as a Function of Additives of 3D-Metals Introduced in the Volume of Thin Nanocrystalline SnO2 Films
- Авторы: Sevast’yanov E.Y.1, Maksimova N.K.1, Potekaev A.I.2,1, Sergeichenko N.V.1, Chernikov E.V.1, Almaev A.V.2, Kushnarev B.O.2
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Учреждения:
- V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
- National Research Tomsk State University
- Выпуск: Том 60, № 7 (2017)
- Страницы: 1094-1098
- Раздел: Article
- URL: https://bakhtiniada.ru/1064-8887/article/view/238441
- DOI: https://doi.org/10.1007/s11182-017-1184-6
- ID: 238441
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Аннотация
Analysis of the results of studying electrical and gas sensitive characteristics of the molecular hydrogen sensors based on thin nanocrystalline SnO2 films coated with dispersed Au layers and containing Au+Ni and Au+Co impurities in the bulk showed that the characteristics of these sensors are more stable under the prolonged exposure to hydrogen in comparison with Au/SnO2:Sb, Au films modified only with gold. It has been found that introduction of the nickel and cobalt additives increases the band bending at the grain boundaries of tin dioxide already in freshly prepared samples, which indicates an increase in the density Ni of the chemisorbed oxygen. It is important that during testing, the band bending eφs at the grain boundaries of tin dioxide additionally slightly increases. It can be assumed that during crystallization of films under thermal annealing, the 3d-metal atoms in the SnO2 volume partially segregate on the surface of microcrystals and form bonds with lattice oxygen, the superstoichiometric tin atoms are formed, and the density Ni increases. If the bonds of oxygen with nickel and cobalt are stronger than those with tin, then, under the prolonged tests, atomic hydrogen will be oxidized not by lattice oxygen, but mainly by the chemisorbed one. In this case, stability of the sensors’ characteristics increases.
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Об авторах
E. Sevast’yanov
V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
Автор, ответственный за переписку.
Email: sese@ngs.ru
Россия, Tomsk
N. Maksimova
V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
Email: sese@ngs.ru
Россия, Tomsk
A. Potekaev
National Research Tomsk State University; V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
Email: sese@ngs.ru
Россия, Tomsk; Tomsk
N. Sergeichenko
V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
Email: sese@ngs.ru
Россия, Tomsk
E. Chernikov
V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
Email: sese@ngs.ru
Россия, Tomsk
A. Almaev
National Research Tomsk State University
Email: sese@ngs.ru
Россия, Tomsk
B. Kushnarev
National Research Tomsk State University
Email: sese@ngs.ru
Россия, Tomsk
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