电邮这篇文章 Semiconductor Plasma Antennas Formed by Laser Radiation
- 作者: Bogachev N.N.1,2,3, Gusein-zade N.G.1,3, Zhluktova I.V.1, Kazantsev S.Y.1, Kamynin V.A.1, Podlesnykh S.V.1, Rogalin V.E.4, Trikshev A.I.1, Filatova S.A.1, Tsvetkov V.B.1,5, Shokhrin D.V.2
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隶属关系:
- Prokhorov General Physics Institute of the Russian Academy of Sciences
- MIREA—Russian Technological University
- Pirogov Russian National Research Medical University
- Institute for Electrophysics and Electric Power, Russian Academy of Sciences
- National Nuclear Research University Moscow Engineering Physics Institute
- 期: 卷 45, 编号 12 (2019)
- 页面: 1223-1225
- 栏目: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208507
- DOI: https://doi.org/10.1134/S1063785019120174
- ID: 208507
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详细
Efficiency of the transmission of high-frequency signals by semiconductor plasma antennas based on Ge and Si single crystals with surface nonequilibrium electron-hole plasma generated by laser diode radiation has been experimentally studied. Dependences of the amplitude of a radiated 6- to 7.5-GHz microwave signal on the laser power and size of the laser-irradiated region on the semiconductor transmitting dipole antenna are determined. It is shown that a more than tenfold increase can be achieved in the efficiency of useful signal transmission by the plasma antenna formed in Ge crystals.
作者简介
N. Bogachev
Prokhorov General Physics Institute of the Russian Academy of Sciences; MIREA—Russian Technological University; Pirogov Russian National Research Medical University
Email: s-kazantsev@mail.ru
俄罗斯联邦, Moscow, 119991; Moscow, 119454; Moscow, 117997
N. Gusein-zade
Prokhorov General Physics Institute of the Russian Academy of Sciences; Pirogov Russian National Research Medical University
Email: s-kazantsev@mail.ru
俄罗斯联邦, Moscow, 119991; Moscow, 117997
I. Zhluktova
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
俄罗斯联邦, Moscow, 119991
S. Kazantsev
Prokhorov General Physics Institute of the Russian Academy of Sciences
编辑信件的主要联系方式.
Email: s-kazantsev@mail.ru
俄罗斯联邦, Moscow, 119991
V. Kamynin
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
俄罗斯联邦, Moscow, 119991
S. Podlesnykh
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
俄罗斯联邦, Moscow, 119991
V. Rogalin
Institute for Electrophysics and Electric Power, Russian Academy of Sciences
Email: s-kazantsev@mail.ru
俄罗斯联邦, St. Petersburg, 191186
A. Trikshev
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
俄罗斯联邦, Moscow, 119991
S. Filatova
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
俄罗斯联邦, Moscow, 119991
V. Tsvetkov
Prokhorov General Physics Institute of the Russian Academy of Sciences; National Nuclear Research University Moscow Engineering Physics Institute
Email: s-kazantsev@mail.ru
俄罗斯联邦, Moscow, 119991; Moscow, 115409
D. Shokhrin
MIREA—Russian Technological University
Email: s-kazantsev@mail.ru
俄罗斯联邦, Moscow, 119454
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