Мақаланы E-mail арқылы жіберу Semiconductor Plasma Antennas Formed by Laser Radiation
- Авторлар: Bogachev N.N.1,2,3, Gusein-zade N.G.1,3, Zhluktova I.V.1, Kazantsev S.Y.1, Kamynin V.A.1, Podlesnykh S.V.1, Rogalin V.E.4, Trikshev A.I.1, Filatova S.A.1, Tsvetkov V.B.1,5, Shokhrin D.V.2
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Мекемелер:
- Prokhorov General Physics Institute of the Russian Academy of Sciences
- MIREA—Russian Technological University
- Pirogov Russian National Research Medical University
- Institute for Electrophysics and Electric Power, Russian Academy of Sciences
- National Nuclear Research University Moscow Engineering Physics Institute
- Шығарылым: Том 45, № 12 (2019)
- Беттер: 1223-1225
- Бөлім: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208507
- DOI: https://doi.org/10.1134/S1063785019120174
- ID: 208507
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
Efficiency of the transmission of high-frequency signals by semiconductor plasma antennas based on Ge and Si single crystals with surface nonequilibrium electron-hole plasma generated by laser diode radiation has been experimentally studied. Dependences of the amplitude of a radiated 6- to 7.5-GHz microwave signal on the laser power and size of the laser-irradiated region on the semiconductor transmitting dipole antenna are determined. It is shown that a more than tenfold increase can be achieved in the efficiency of useful signal transmission by the plasma antenna formed in Ge crystals.
Негізгі сөздер
Авторлар туралы
N. Bogachev
Prokhorov General Physics Institute of the Russian Academy of Sciences; MIREA—Russian Technological University; Pirogov Russian National Research Medical University
Email: s-kazantsev@mail.ru
Ресей, Moscow, 119991; Moscow, 119454; Moscow, 117997
N. Gusein-zade
Prokhorov General Physics Institute of the Russian Academy of Sciences; Pirogov Russian National Research Medical University
Email: s-kazantsev@mail.ru
Ресей, Moscow, 119991; Moscow, 117997
I. Zhluktova
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
Ресей, Moscow, 119991
S. Kazantsev
Prokhorov General Physics Institute of the Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: s-kazantsev@mail.ru
Ресей, Moscow, 119991
V. Kamynin
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
Ресей, Moscow, 119991
S. Podlesnykh
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
Ресей, Moscow, 119991
V. Rogalin
Institute for Electrophysics and Electric Power, Russian Academy of Sciences
Email: s-kazantsev@mail.ru
Ресей, St. Petersburg, 191186
A. Trikshev
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
Ресей, Moscow, 119991
S. Filatova
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
Ресей, Moscow, 119991
V. Tsvetkov
Prokhorov General Physics Institute of the Russian Academy of Sciences; National Nuclear Research University Moscow Engineering Physics Institute
Email: s-kazantsev@mail.ru
Ресей, Moscow, 119991; Moscow, 115409
D. Shokhrin
MIREA—Russian Technological University
Email: s-kazantsev@mail.ru
Ресей, Moscow, 119454
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