Influence of hydrogen on the thermoelectric voltage signal in a Pt/WOx/6H-SiC/Ni/Pt layered structure
- 作者: Zuev V.V.1, Grigoriev S.N.2, Fominski V.Y.1, Volosova M.A.2, Soloviev A.A.1
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隶属关系:
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- Moscow State Technological University STANKIN
- 期: 卷 43, 编号 9 (2017)
- 页面: 790-793
- 栏目: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/205909
- DOI: https://doi.org/10.1134/S1063785017090139
- ID: 205909
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详细
The possibility of detecting H2 by registering the thermal electromotive force signal, which arises between the surfaces of 6H-SiC plates with a thickness of 400 μm, is established. The working surface of the plates is modified by deposition of a WOx film and catalytic Pt. An ohmic contact (Ni/Pt) is created on the rear surface of the plate, and this surface is maintained at a stabilized temperature of 350°C. The temperature gradient through the plate thickness arises due to the cooling of the working surface with the air medium. The delivery of H2 into this medium up to a concentration of 2% gives rise to a 15-fold increase in the electric signal, which considerably exceeds the Pt/WOx/SiC/Ni/Pt system’s response registered in the usual way by measuring the current–voltage dependence. In this case, an additional power source for the registration of the thermal electromotive force is not required.
作者简介
V. Zuev
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: vyfominskij@mephi.ru
俄罗斯联邦, Moscow, 115409
S. Grigoriev
Moscow State Technological University STANKIN
Email: vyfominskij@mephi.ru
俄罗斯联邦, Moscow, 127055
V. Fominski
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
编辑信件的主要联系方式.
Email: vyfominskij@mephi.ru
俄罗斯联邦, Moscow, 115409
M. Volosova
Moscow State Technological University STANKIN
Email: vyfominskij@mephi.ru
俄罗斯联邦, Moscow, 127055
A. Soloviev
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: vyfominskij@mephi.ru
俄罗斯联邦, Moscow, 115409
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