电邮这篇文章 Terahertz emission at impurity electrical breakdown in Si(Li)
- 作者: Andrianov A.V.1, Zakhar’in A.O.1, Zhukavin R.K.2, Shastin V.N.2,3, Shengurov D.V.2, Abrosimov N.V.4
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隶属关系:
- Ioffe Physical Technical Institute
- Institute for Physics of Microstructures
- Lobachevsky State University of Nizhny Novgorod
- Leibniz Institute for Crystal Growth
- 期: 卷 42, 编号 10 (2016)
- 页面: 1031-1033
- 栏目: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/201690
- DOI: https://doi.org/10.1134/S1063785016100163
- ID: 201690
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详细
Terahertz electroluminescence caused by impurity-induced breakdown in lithium-doped silicon crystals is studied. The spectrum of the terahertz emission exhibits lines corresponding to intracenter electronic transitions between excited states of the impurity and sublevels of the ground state of the lithium donor. The spectrum also shows a background signal, which, apparently, is a manifestation of the effects due to heating at electric excitation.
作者简介
A. Andrianov
Ioffe Physical Technical Institute
编辑信件的主要联系方式.
Email: alex.andrianov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Zakhar’in
Ioffe Physical Technical Institute
Email: alex.andrianov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
R. Zhukavin
Institute for Physics of Microstructures
Email: alex.andrianov@mail.ioffe.ru
俄罗斯联邦, Afonino, Nizhny Novgorod oblast’, 603087
V. Shastin
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: alex.andrianov@mail.ioffe.ru
俄罗斯联邦, Afonino, Nizhny Novgorod oblast’, 603087; Nizhny Novgorod, 603950
D. Shengurov
Institute for Physics of Microstructures
Email: alex.andrianov@mail.ioffe.ru
俄罗斯联邦, Afonino, Nizhny Novgorod oblast’, 603087
N. Abrosimov
Leibniz Institute for Crystal Growth
Email: alex.andrianov@mail.ioffe.ru
德国, Berlin, 12489
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