Terahertz emission at impurity electrical breakdown in Si(Li)


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

Terahertz electroluminescence caused by impurity-induced breakdown in lithium-doped silicon crystals is studied. The spectrum of the terahertz emission exhibits lines corresponding to intracenter electronic transitions between excited states of the impurity and sublevels of the ground state of the lithium donor. The spectrum also shows a background signal, which, apparently, is a manifestation of the effects due to heating at electric excitation.

Авторлар туралы

A. Andrianov

Ioffe Physical Technical Institute

Хат алмасуға жауапты Автор.
Email: alex.andrianov@mail.ioffe.ru
Ресей, St. Petersburg, 194021

A. Zakhar’in

Ioffe Physical Technical Institute

Email: alex.andrianov@mail.ioffe.ru
Ресей, St. Petersburg, 194021

R. Zhukavin

Institute for Physics of Microstructures

Email: alex.andrianov@mail.ioffe.ru
Ресей, Afonino, Nizhny Novgorod oblast’, 603087

V. Shastin

Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod

Email: alex.andrianov@mail.ioffe.ru
Ресей, Afonino, Nizhny Novgorod oblast’, 603087; Nizhny Novgorod, 603950

D. Shengurov

Institute for Physics of Microstructures

Email: alex.andrianov@mail.ioffe.ru
Ресей, Afonino, Nizhny Novgorod oblast’, 603087

N. Abrosimov

Leibniz Institute for Crystal Growth

Email: alex.andrianov@mail.ioffe.ru
Германия, Berlin, 12489

Қосымша файлдар

Қосымша файлдар
Әрекет
1. JATS XML

© Pleiades Publishing, Ltd., 2016