Determination of topological parameters of a laser with passive mode-locking on the basis of InGaAlAs/InGaAs/InP heterostructures

G. A. Mikhailovskii; I. S. Polukhin; D. A. Rybalko; Yu. V. Solov’ev; M. A. Odnoblyudov

doi:10.1134/S1063785016050114

Determination of topological parameters of a laser with passive mode-locking on the basis of InGaAlAs/InGaAs/InP heterostructures

作者: Mikhailovskii G.A.¹, Polukhin I.S.¹, Rybalko D.A.¹, Solov’ev Y.V.¹, Odnoblyudov M.A.¹
隶属关系:
1. St. Petersburg Polytechnic University
期: 卷 42, 编号 5 (2016)
页面: 471-474
栏目: Article
URL: https://bakhtiniada.ru/1063-7850/article/view/198993
DOI: https://doi.org/10.1134/S1063785016050114
ID: 198993

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
补充文件
统计

详细

Topological parameters of a strip-geometry laser with passive mode-locking on the basis of an InGaAlAs/InGaAs/InP heterostructure are determined from the condition for the existence of one transverse mode in a strip waveguide. The strip width was 1.5 μm, the mesa etch depth was 1.32 μm, and the thickness of the dielectric layer was 0.36 μm.