电邮这篇文章 The influence of an In0.52Al0.48As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor
- 作者: Lazarenko A.A.1, Nikitina E.V.1, Pirogov E.V.1, Sobolev M.S.1, Egorov A.Y.2,3
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隶属关系:
- St. Petersburg Academic University, Nanotechnology Research and Education Center
- Ioffe Physical Technical Institute
- St. Petersburg National Research University of Information Technologies
- 期: 卷 42, 编号 3 (2016)
- 页面: 284-286
- 栏目: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/197908
- DOI: https://doi.org/10.1134/S1063785016030238
- ID: 197908
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详细
We have used the atomic force microscopy and Hall effect measurements to study the influence of In0.52Al0.48As transition layer design on the electron mobility in the InAlAs/InGaAs/GaAs channel of a highelectron- mobility transistor (HEMT) with the metamorphic buffer. The optimum buffer layer favors suppression of the misfit dislocation threading into upper layers of the HEMT heterostructure and prevents development of the surface microrelief.
作者简介
A. Lazarenko
St. Petersburg Academic University, Nanotechnology Research and Education Center
编辑信件的主要联系方式.
Email: lazarenko@spbau.ru
俄罗斯联邦, St. Petersburg, 194021
E. Nikitina
St. Petersburg Academic University, Nanotechnology Research and Education Center
Email: lazarenko@spbau.ru
俄罗斯联邦, St. Petersburg, 194021
E. Pirogov
St. Petersburg Academic University, Nanotechnology Research and Education Center
Email: lazarenko@spbau.ru
俄罗斯联邦, St. Petersburg, 194021
M. Sobolev
St. Petersburg Academic University, Nanotechnology Research and Education Center
Email: lazarenko@spbau.ru
俄罗斯联邦, St. Petersburg, 194021
A. Egorov
Ioffe Physical Technical Institute; St. Petersburg National Research University of Information Technologies
Email: lazarenko@spbau.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197101
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