The influence of an In0.52Al0.48As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor


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We have used the atomic force microscopy and Hall effect measurements to study the influence of In0.52Al0.48As transition layer design on the electron mobility in the InAlAs/InGaAs/GaAs channel of a highelectron- mobility transistor (HEMT) with the metamorphic buffer. The optimum buffer layer favors suppression of the misfit dislocation threading into upper layers of the HEMT heterostructure and prevents development of the surface microrelief.

Sobre autores

A. Lazarenko

St. Petersburg Academic University, Nanotechnology Research and Education Center

Autor responsável pela correspondência
Email: lazarenko@spbau.ru
Rússia, St. Petersburg, 194021

E. Nikitina

St. Petersburg Academic University, Nanotechnology Research and Education Center

Email: lazarenko@spbau.ru
Rússia, St. Petersburg, 194021

E. Pirogov

St. Petersburg Academic University, Nanotechnology Research and Education Center

Email: lazarenko@spbau.ru
Rússia, St. Petersburg, 194021

M. Sobolev

St. Petersburg Academic University, Nanotechnology Research and Education Center

Email: lazarenko@spbau.ru
Rússia, St. Petersburg, 194021

A. Egorov

Ioffe Physical Technical Institute; St. Petersburg National Research University of Information Technologies

Email: lazarenko@spbau.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101

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