Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

Resumo

Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si₃N₄) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si₃N₄ contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si₃N₄.