Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon
- Авторы: Tregulov V.V.1, Litvinov V.G.2, Ermachikhin A.V.2
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Учреждения:
- Yesenin Ryazan State University
- Ryazan State Radio Engineering University
- Выпуск: Том 43, № 11 (2017)
- Страницы: 955-957
- Раздел: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/206286
- DOI: https://doi.org/10.1134/S1063785017110128
- ID: 206286
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Аннотация
Defects in a semiconductor structure of a photoelectric converter of solar energy based on a p–n junction with an antireflection film of porous silicon on the front surface have been studied by current deeplevel transient spectroscopy. An explanation of the influence of thickness of a porous-silicon film formed by electrochemical etching on the character of transformation of defects with deep levels and efficiency of solarenergy conversion is proposed.
Об авторах
V. Tregulov
Yesenin Ryazan State University
Автор, ответственный за переписку.
Email: trww@yandex.ru
Россия, Ryazan, 390000
V. Litvinov
Ryazan State Radio Engineering University
Email: trww@yandex.ru
Россия, Ryazan, 390005
A. Ermachikhin
Ryazan State Radio Engineering University
Email: trww@yandex.ru
Россия, Ryazan, 390005
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