Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon

Abstract

Defects in a semiconductor structure of a photoelectric converter of solar energy based on a p–n junction with an antireflection film of porous silicon on the front surface have been studied by current deeplevel transient spectroscopy. An explanation of the influence of thickness of a porous-silicon film formed by electrochemical etching on the character of transformation of defects with deep levels and efficiency of solarenergy conversion is proposed.