Отправить статью по E-mail Growing InAs/GaAs quantum dots by droplet epitaxy under MOVPE conditions
- Авторы: Surnina M.A.1, Akchurin R.K.1, Marmalyuk A.A.1,2, Bagaev T.A.3, Sizov A.L.4
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Учреждения:
- Lomonosov State University of Fine Chemical Technology
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- Sigm Plus Company
- Orion Research and Production Corporation
- Выпуск: Том 42, № 7 (2016)
- Страницы: 747-749
- Раздел: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/200185
- DOI: https://doi.org/10.1134/S1063785016070294
- ID: 200185
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Аннотация
Results of studying the formation of InAs quantum dots (QDs) on GaAs(100) substrates by droplet epitaxy using trimethylindium and arsine (AsH3) as precursors are presented. The growth process was carried out at temperatures within 230–400°C in a horizontal reactor for metalorganic vapor phase epitaxy (MOVPE) using high-purity hydrogen as the carrier gas. Data on the influence of process temperature on the QD size and the density of QD array and results of investigation of the low-temperature photoluminescence of obtained samples are presented.
Об авторах
M. Surnina
Lomonosov State University of Fine Chemical Technology
Email: rakchur@mail.ru
Россия, Moscow, 119571
R. Akchurin
Lomonosov State University of Fine Chemical Technology
Автор, ответственный за переписку.
Email: rakchur@mail.ru
Россия, Moscow, 119571
A. Marmalyuk
Lomonosov State University of Fine Chemical Technology; National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: rakchur@mail.ru
Россия, Moscow, 119571; Moscow, 115409
T. Bagaev
Sigm Plus Company
Email: rakchur@mail.ru
Россия, Moscow, 117342
A. Sizov
Orion Research and Production Corporation
Email: rakchur@mail.ru
Россия, Moscow, 111538
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