Elastic Scattering of Neutral Fluorine on Si, O, C, and H Atoms in the Range of the Relative Kinetic Energies of 2–200 eV
- Autores: Palov A.1, Zhang J.2, Baklanov M.2, Wei S.2
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Afiliações:
- Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
- Institute of Electronic Information Engineering, North China University of Technology
- Edição: Volume 45, Nº 12 (2019)
- Páginas: 1187-1190
- Seção: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208497
- DOI: https://doi.org/10.1134/S1063785019120113
- ID: 208497
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Resumo
Binary interatomic potentials F–F, F–Si, F–O, F–C, and F–H are calculated from the first principles (ab initio) on the basis of the multi-configuration method of self-consistent field (CAS-SCF) with a basic set of atomic wave functions aug-pp-AV6Z and are used to calculate phase shifts and cross sections of elastic scattering of atoms in the range of relative kinetic energies of 2–200 eV. It is expected that the obtained elastic scattering cross sections will be useful for a description of sputtering and etching of porous organosilicate films with ethylene bridges used in modern nanoelectronics.
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Sobre autores
A. Palov
Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
Autor responsável pela correspondência
Email: a.palov@mail.ru
Rússia, Moscow, 119991
Jing Zhang
Institute of Electronic Information Engineering, North China University of Technology
Email: weishuhua@ncut.edu.cn
República Popular da China, Beijing
M. Baklanov
Institute of Electronic Information Engineering, North China University of Technology
Email: weishuhua@ncut.edu.cn
República Popular da China, Beijing
Shuhua Wei
Institute of Electronic Information Engineering, North China University of Technology
Autor responsável pela correspondência
Email: weishuhua@ncut.edu.cn
República Popular da China, Beijing
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