Defect Structure of GaAs Layers Implanted with Nitrogen Ions

Resumo

Structural defects formed in epitaxial GaAs layers as a result of 250-keV N⁺ ion implantation to doses within 5 × 10¹⁴–5 × 10¹⁶ cm^–2 have been studied by the X-ray diffraction (XRD) and transmission electron microscopy techniques. No amorphization of the ion-implanted layer took place in the entire dose range studied. The implantation to doses of 5 × 10¹⁴ and 5 × 10¹⁵ cm^–2 led to the appearance of an additional peak on XRD curves, which was related to the formation of a stressed GaAs layer with positive deformation arising due to the formation of point-defect clusters. The implantation to a dose of 5 × 10¹⁶ cm^–2 led to the formation of a dense structure of extended defects in the implanted layer, which was accompanied by the relaxation of macrostresses to the initial state.