A Study of the Influence Exerted by Structural Defects on Photoluminescence Spectra in n-3C-SiC


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Аннотация

Photoluminescence (PL) spectra have been studied in 3C-SiC/4H-SiC heterostructures and 3C‑SiC single crystals. It was shown that epitaxial 3C-SiC layers grown on 4H-SiC substrates have a markedly poorer crystal perfection than do 3C-SiC single crystals. It was found that doping with aluminum gives rise to a characteristic PL both in epitaxial layers and in 3C-SiC single crystals. At the same time, the electron irradiation of epitaxial layers does not give rise to defect-related PL, in contrast to what is observed for single crystals. An assumption is made that the twin boundaries existing in epitaxial 3C-SiC layers can serve as getters of radiation defects that are components of donor–acceptor pairs responsible for the “defect-related” PL.

Авторлар туралы

A. Lebedev

Ioffe Physical Technical Institute, Russian Academy of Sciences; St. Petersburg State Electrotechnical University LETI

Хат алмасуға жауапты Автор.
Email: shura.lebe@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197376

I. Nikitina

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: shura.lebe@mail.ioffe.ru
Ресей, St. Petersburg, 194021

N. Seredova

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: shura.lebe@mail.ioffe.ru
Ресей, St. Petersburg, 194021

N. Poletaev

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: shura.lebe@mail.ioffe.ru
Ресей, St. Petersburg, 194021

S. Lebedev

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: shura.lebe@mail.ioffe.ru
Ресей, St. Petersburg, 194021

V. Kozlovski

Peter the Great St. Petersburg Polytechnic University

Email: shura.lebe@mail.ioffe.ru
Ресей, St. Petersburg, 195021

A. Zubov

St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)

Email: shura.lebe@mail.ioffe.ru
Ресей, St. Petersburg, 197101

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