Email this article Deep-Level Defects in a Photovoltaic Converter with an Antireflection Porous Silicon Film Formed by Chemical Stain Etching
- Authors: Tregulov V.V.1, Litvinov V.G.2, Ermachikhin A.V.2
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Affiliations:
- Ryazan State University
- Ryazan State Radio Engineering University
- Issue: Vol 45, No 2 (2019)
- Pages: 145-148
- Section: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208217
- DOI: https://doi.org/10.1134/S1063785019020342
- ID: 208217
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Abstract
Defects in the semiconductor structure of a photovoltaic converter (PVC) with a p–n junction and antireflection film of porous silicon manufactured using chemical stain etching were studied by the current deep-level transient spectroscopy technique. The influence of the regime of porous silicon film formation on the transformation of deep-level defects and the main PVC characteristics is explained.
About the authors
V. V. Tregulov
Ryazan State University
Author for correspondence.
Email: trww@yandex.ru
Russian Federation, Ryazan, 390000
V. G. Litvinov
Ryazan State Radio Engineering University
Email: trww@yandex.ru
Russian Federation, Ryazan, 390005
A. V. Ermachikhin
Ryazan State Radio Engineering University
Email: trww@yandex.ru
Russian Federation, Ryazan, 390005
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