High-Efficiency AlGaAs/GaAs Photovoltaic Converters with Edge Input of Laser Light


Дәйексөз келтіру

Толық мәтін

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Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

High-efficiency photovoltaic converters (PVCs) have been developed and fabricated by liquidphase epitaxy in the AlGaAs–GaAs system with laser light (λ = 850 nm) introduced through the edge surface in parallel to the plane of the p–n junction of the device structure. To raise the efficiency of light “capture” by the p–n junction, an AlxGa1–xAs waveguide layer is formed, in which the content of aluminum gradually varies from x = 0.55 to 0.15 so that the refractive index gradient is created in this layer and light beams are diverted toward the p–n junction. When a PVC (having no antireflection coating) is exposed to 0.1- to 0.2-W laser light, an efficiency of 41.5% is obtained. Depositing an antireflection coating on the edge surface of a PVC raises its efficiency to 55%.

Авторлар туралы

V. Khvostikov

Ioffe Physical Technical Institute

Хат алмасуға жауапты Автор.
Email: vlkhv@scell.ioffe.ru
Ресей, St. Petersburg, 194021

P. Pokrovskii

Ioffe Physical Technical Institute

Email: vlkhv@scell.ioffe.ru
Ресей, St. Petersburg, 194021

O. Khvostikova

Ioffe Physical Technical Institute

Email: vlkhv@scell.ioffe.ru
Ресей, St. Petersburg, 194021

A. Pan’chak

Ioffe Physical Technical Institute

Email: vlkhv@scell.ioffe.ru
Ресей, St. Petersburg, 194021

V. Andreev

Ioffe Physical Technical Institute

Email: vlkhv@scell.ioffe.ru
Ресей, St. Petersburg, 194021

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