Observation of manifestations of spontaneous magnetization currents in the crystals of HgSe with low concentration impurities of 3d-transition metal

Abstract

The differential method of the study of the Hall effect in the regime of the Hall current, the implementation of which is possible due to an inhomogeneous distribution of the concentration of charge carriers in the sample, has been proposed. This method was tested in crystals of HgSe: Co and HgSe: Ga with the aim to observe the anomalous contribution to the Hall current associated with the spontaneous magnetization current and perform comparative analysis of the degree of heterogeneity of the samples.