Resonant electron tunneling and related charging phenomena in metal–oxide–p+-Si nanostructures
- Авторлар: Vexler M.I.1, Kareva G.G.2, Illarionov Y.Y.1,3, Grekhov I.V.1
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Мекемелер:
- Ioffe Physical-Technical Institute
- Physical Faculty
- Institute for Microelectronics
- Шығарылым: Том 42, № 11 (2016)
- Беттер: 1090-1093
- Бөлім: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/201902
- DOI: https://doi.org/10.1134/S1063785016110109
- ID: 201902
Дәйексөз келтіру
Аннотация
The j–V characteristics of the Al/thermal or electrochemical SiO2(2–4 nm)/heavily doped p+-Si nanostructures operating as a resonant-tunneling diode were measured and theoretically analyzed. The characteristics have specific features in the form of current steps and peaks, which are caused by electron transport between the silicon valence band and metal through discrete levels of the quantum well formed by the p+-Si conduction band and SiO2/p+-Si interface. Resonant tunneling through the surface state levels and the appearance of a charge near this interface under certain conditions are discussed.
Авторлар туралы
M. Vexler
Ioffe Physical-Technical Institute
Хат алмасуға жауапты Автор.
Email: shulekin@mail.ioffe.ru
Ресей, St. Petersburg, 194021
G. Kareva
Physical Faculty
Email: shulekin@mail.ioffe.ru
Ресей, St. Petersburg, 198504
Yu. Illarionov
Ioffe Physical-Technical Institute; Institute for Microelectronics
Email: shulekin@mail.ioffe.ru
Ресей, St. Petersburg, 194021; Vienna, A-1040
I. Grekhov
Ioffe Physical-Technical Institute
Email: shulekin@mail.ioffe.ru
Ресей, St. Petersburg, 194021
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