Email this article Asymmetry of the Defect Structure of Semipolar GaN Grown on Si(001)
- Authors: Kalmykov A.E.1, Myasoedov A.V.1, Sorokin L.M.1
-
Affiliations:
- Ioffe Physical Technical Institute
- Issue: Vol 44, No 10 (2018)
- Pages: 926-929
- Section: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/207995
- DOI: https://doi.org/10.1134/S1063785018100267
- ID: 207995
Cite item
Open Access
Access granted
Subscription Access
Abstract
The defect structure of a thick (~15 μm) semipolar gallium nitride (GaN) layer grown by hydride–chloride vapor phase epitaxy on a Si(001) substrate with buffer layers has been studied by transmission electron microscopy. The asymmetry of the defect structure of GaN epilayer has been revealed and analyzed. The influence of this asymmetry on the rate of decrease in the density of threading dislocations in the growing epitaxial layer is discussed.
About the authors
A. E. Kalmykov
Ioffe Physical Technical Institute
Email: aemyasoedov88@gmail.com
Russian Federation, St. Petersburg, 194021
A. V. Myasoedov
Ioffe Physical Technical Institute
Author for correspondence.
Email: aemyasoedov88@gmail.com
Russian Federation, St. Petersburg, 194021
L. M. Sorokin
Ioffe Physical Technical Institute
Email: aemyasoedov88@gmail.com
Russian Federation, St. Petersburg, 194021
Supplementary files
