🔧На сайте запланированы технические работы
25.12.2025 в промежутке с 18:00 до 21:00 по Московскому времени (GMT+3) на сайте будут проводиться плановые технические работы. Возможны перебои с доступом к сайту. Приносим извинения за временные неудобства. Благодарим за понимание!
🔧Site maintenance is scheduled.
Scheduled maintenance will be performed on the site from 6:00 PM to 9:00 PM Moscow time (GMT+3) on December 25, 2025. Site access may be interrupted. We apologize for the inconvenience. Thank you for your understanding!

 

Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium


Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

We present the results of investigations of the transport properties of graphene films obtained by thermodestruction of a 4H-SiC (0001) surface in argon. The charge-carrier concentration in the graphene layer was within 7 × 1011–1 × 1012 cm–2, and the maximum mobility of electrons approached 6000 cm2/(V · s). The achieved parameters of mobility are close to theoretical values calculated for graphene films with intrinsic conductivity on the Si face of SiC at Т = 300 К in the absence of intercalated hydrogen.

Sobre autores

S. Lebedev

Ioffe Physical Technical Institute

Autor responsável pela correspondência
Email: lebedev.sergey@mail.ioffe.ru
Rússia, St. Petersburg, 194021

I. Eliseyev

St. Petersburg State University

Email: lebedev.sergey@mail.ioffe.ru
Rússia, St. Petersburg, 199034

V. Davydov

Ioffe Physical Technical Institute

Email: lebedev.sergey@mail.ioffe.ru
Rússia, St. Petersburg, 194021

A. Smirnov

Ioffe Physical Technical Institute; St. Petersburg National University of Information Technologies, Mechanics, and Optics (ITMO University)

Email: lebedev.sergey@mail.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 197101

V. Levitskii

R&D Center for Thin Film Technologies in Energetics

Email: lebedev.sergey@mail.ioffe.ru
Rússia, St. Petersburg, 194064

M. Mynbaeva

Ioffe Physical Technical Institute

Email: lebedev.sergey@mail.ioffe.ru
Rússia, St. Petersburg, 194021

M. Kulagina

Ioffe Physical Technical Institute

Email: lebedev.sergey@mail.ioffe.ru
Rússia, St. Petersburg, 194021

B. Hähnlein

FG Nanotechnologie, Institut für Mikro- und Nanotechnologien und Institut für Mikro- und Nanoelektronik

Email: lebedev.sergey@mail.ioffe.ru
Alemanha, Ilmenau

J. Pezoldt

FG Nanotechnologie, Institut für Mikro- und Nanotechnologien und Institut für Mikro- und Nanoelektronik

Email: lebedev.sergey@mail.ioffe.ru
Alemanha, Ilmenau

A. Lebedev

Ioffe Physical Technical Institute

Email: lebedev.sergey@mail.ioffe.ru
Rússia, St. Petersburg, 194021

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML

Declaração de direitos autorais © Pleiades Publishing, Ltd., 2017