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Vol 45, No 11 (2019)
InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics
Maleev N.A., Vasil’ev A.P., Kuzmenkov A.G., Bobrov M.A., Kulagina M.M., Troshkov S.I., Maleev S.N., Belyakov V.A., Petryakova E.V., Kudryashova Y.P., Fefelova E.L., Makartsev I.V., Blokhin S.A., Ahmedov F.A., Egorov A.V., Fefelov A.G., Ustinov V.M.
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(Eng)
Vol 45, No 8 (2019)
Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors
Malin T.V., Milakhin D.S., Aleksandrov I.A., Zemlyakov V.E., Egorkin V.I., Zaitsev A.A., Protasov D.Y., Kozhukhov A.S., Ber B.Y., Kazantsev D.Y., Mansurov V.G., Zhuravlev K.S.
PDF
(Eng)
Vol 45, No 7 (2019)
Insulating GaN Epilayers Co-Doped with Iron and Carbon
Lundin W.V., Sakharov A.V., Zavarin E.E., Zakgeim D.A., Lundina E.Y., Brunkov P.N., Tsatsulnikov A.F.
PDF
(Eng)
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