Автор туралы ақпарат

Kazantsev, D. Yu.

Шығарылым	Бөлім	Атауы	Файл
Том 42, № 5 (2016)	Article	Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
Том 42, № 6 (2016)	Article	Solar-blind Al_xGa_1–xN (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter
Том 43, № 10 (2017)	Article	A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE
Том 44, № 7 (2018)	Article	The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers
Том 44, № 12 (2018)	Article	A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy
Том 45, № 8 (2019)	Article	Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors
Том 45, № 8 (2019)	Article	Characteristics of a Silicon Avalanche Photodiode for the Near-IR Spectral Range
Том 45, № 10 (2019)	Article	Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates
Том 45, № 12 (2019)	Article	Quantum Yield of a Silicon XUV Avalanche Photodiode in the 320–1100 nm Wavelength Range