A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy


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Gradual variation of the content y of Group-V components by Δy of up to 0.08 across the thickness (600–850 nm) of an epitaxial layer has been observed for Ga1 – xInxAsyP1 – y solid solutions (x = 0.86, y = 0.07–0.42) produced on InP by metal-organic vapor-phase epitaxy under lowered pressure, although the composition of the gas mixture, temperature, and pressure were maintained invariable in the course of the growth process. For different gas mixture compositions, the value of Δy and the manner of its variation were different. An analysis of the data obtained demonstrated that Δy is due to the deformations that appear in a growing layer because of the lattice mismatch with the substrate.

Sobre autores

V. Vasil’ev

Ioffe Physical Technical Institute

Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021

G. Gagis

Ioffe Physical Technical Institute

Autor responsável pela correspondência
Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021

R. Levin

Ioffe Physical Technical Institute

Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021

A. Marichev

Ioffe Physical Technical Institute

Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021

B. Pushnyi

Ioffe Physical Technical Institute

Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021

M. Scheglov

Ioffe Physical Technical Institute

Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021

V. Kuchinskii

Ioffe Physical Technical Institute; St. Petersburg State Electrotechnical University LETI

Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg, 197376

B. Ber

Ioffe Physical Technical Institute

Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021

D. Kazantsev

Ioffe Physical Technical Institute

Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021

A. Gorokhov

Ioffe Physical Technical Institute

Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021

T. Popova

Ioffe Physical Technical Institute

Email: galina.gagis@gmail.com
Rússia, St. Petersburg, 194021

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