Author Details

Sakharov, A. V.

Issue	Section	Title	File
Vol 42, No 4 (2016)	Article	The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy
Vol 42, No 5 (2016)	Article	Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
Vol 42, No 7 (2016)	Article	The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial
Vol 42, No 10 (2016)	Article	Metamaterial for efficient second harmonic generation
Vol 42, No 11 (2016)	Article	Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
Vol 44, No 1 (2018)	Near-IR Vertical-Cavity Surface-Emitting Lasers (Special Issue)	High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)
Vol 44, No 7 (2018)	Article	The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas
Vol 45, No 7 (2019)	Article	Insulating GaN Epilayers Co-Doped with Iron and Carbon