The Influence of a Flow of Low-Temperature Nitrogen Plasma on the Morphology, Electric Properties, and UV Photoconductivity of ZnO Films on Sapphire

Resumo

We have studied the influence of a flow of high-enthalpy nitrogen plasma generated by a dc plasmatron on the morphology, electrical properties, and UV photoconductivity of ZnO films on sapphire substrates. It was found that the resistance of nitrogen-plasma-treated ZnO films increased (by a maximum factor of 10⁴) and the processed films exhibited clearly pronounced response to UV irradiation. The UV responsivity of current and the current pulse contrast at 6 V were on a level of 3.6 × 10^–5 A/W and 16, respectively. The photocurrent pulse rise and decay times were ~0.45 s.