Poly-para-xylylene-Based Memristors on Flexible Substrates
- Авторы: Shvetsov B.S.1,2, Matsukatova A.N.1,2, Minnekhanov A.A.2, Nesmelov A.A.2, Goncharov B.V.2, Lapkin D.A.2, Martyshov M.N.1, Forsh P.A.2,3, Rylkov V.V.2,4, Demin V.A.2, Emelyanov A.V.2,3
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Учреждения:
- Moscow State University
- National Research Centre Kurchatov Institute
- Institute of Nano-, Bio-, Information, Cognitive, and Social Sciences and Technologies, Moscow Institute of Physics and Technology
- Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences
- Выпуск: Том 45, № 11 (2019)
- Страницы: 1103-1106
- Раздел: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208476
- DOI: https://doi.org/10.1134/S1063785019110130
- ID: 208476
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Аннотация
Flexible memristive structures based on poly-para-xylelene layers, which exhibit stable resistive switchings and are resistant to bendings with radii up to 10 mm, have been prepared and studied. A two-step scheme of setting the resistive state of the memristive structure is proposed, which is based on monitoring the compliance current passing through the structure. The results obtained allow memristive structures based on poly-para-xylelene layers to be used for neuromorphic computational systems and biocompatible “wearable” electronics.
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Об авторах
B. Shvetsov
Moscow State University; National Research Centre Kurchatov Institute
Автор, ответственный за переписку.
Email: b.shvetsov15@physics.msu.ru
Россия, Moscow, 119991; Moscow, 123182
A. Matsukatova
Moscow State University; National Research Centre Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
Россия, Moscow, 119991; Moscow, 123182
A. Minnekhanov
National Research Centre Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
Россия, Moscow, 123182
A. Nesmelov
National Research Centre Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
Россия, Moscow, 123182
B. Goncharov
National Research Centre Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
Россия, Moscow, 123182
D. Lapkin
National Research Centre Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
Россия, Moscow, 123182
M. Martyshov
Moscow State University
Email: b.shvetsov15@physics.msu.ru
Россия, Moscow, 119991
P. Forsh
National Research Centre Kurchatov Institute; Institute of Nano-, Bio-, Information, Cognitive, and Social Sciences and Technologies,Moscow Institute of Physics and Technology
Email: b.shvetsov15@physics.msu.ru
Россия, Moscow, 123182; Moscow, 123098
V. Rylkov
National Research Centre Kurchatov Institute; Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences
Email: b.shvetsov15@physics.msu.ru
Россия, Moscow, 123182; Fryazino, Moscow oblast, 141190
V. Demin
National Research Centre Kurchatov Institute
Email: b.shvetsov15@physics.msu.ru
Россия, Moscow, 123182
A. Emelyanov
National Research Centre Kurchatov Institute; Institute of Nano-, Bio-, Information, Cognitive, and Social Sciences and Technologies,Moscow Institute of Physics and Technology
Email: b.shvetsov15@physics.msu.ru
Россия, Moscow, 123182; Moscow, 123098
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