Specific Features of the Current–Voltage Characteristic of Microdisk Lasers Based on InGaAs/GaAs Quantum Well-Dots


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots, formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about 1.5 μm is formed near the side surface, which leads to a decrease in the effective current flow area.

作者简介

F. Zubov

St. Petersburg National Research Academic University, Russian Academy of Sciences

Email: zhukale@gmail.com
俄罗斯联邦, St. Petersburg

E. Moiseev

St. Petersburg National Research Academic University, Russian Academy of Sciences

Email: zhukale@gmail.com
俄罗斯联邦, St. Petersburg

G. Kornyshov

St. Petersburg National Research Academic University, Russian Academy of Sciences

Email: zhukale@gmail.com
俄罗斯联邦, St. Petersburg

N. Kryzhanovskaya

St. Petersburg National Research Academic University, Russian Academy of Sciences

Email: zhukale@gmail.com
俄罗斯联邦, St. Petersburg

Yu. Shernyakov

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: zhukale@gmail.com
俄罗斯联邦, St. Petersburg, 194021

A. Payusov

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: zhukale@gmail.com
俄罗斯联邦, St. Petersburg, 194021

M. Kulagina

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: zhukale@gmail.com
俄罗斯联邦, St. Petersburg, 194021

N. Kalyuzhnyi

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: zhukale@gmail.com
俄罗斯联邦, St. Petersburg, 194021

S. Mintairov

Ioffe Physical Technical Institute, Russian Academy of Sciences

Email: zhukale@gmail.com
俄罗斯联邦, St. Petersburg, 194021

M. Maximov

St. Petersburg National Research Academic University, Russian Academy of Sciences

Email: zhukale@gmail.com
俄罗斯联邦, St. Petersburg

A. Zhukov

St. Petersburg National Research Academic University, Russian Academy of Sciences

编辑信件的主要联系方式.
Email: zhukale@gmail.com
俄罗斯联邦, St. Petersburg

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Ltd., 2019