Email this article Planar Capacitive Structures Based on Ferroelectric Barium Titanate–Stannate Films on Sapphire for Microwave Applications
- Authors: Tumarkin A.V.1, Zlygostov M.V.1, Gagarin A.G.1, Altynnikov A.G.1, Sapego E.N.1
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Affiliations:
- St. Petersburg Electrotechnical University LETI
- Issue: Vol 45, No 7 (2019)
- Pages: 639-642
- Section: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208353
- DOI: https://doi.org/10.1134/S1063785019070137
- ID: 208353
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Abstract
The structural properties of ferroelectric barium titanate–stannate films on sapphire substrates and microwave characteristics of related planar capacitive elements have been investigated. The gas-medium composition during the film deposition has been established to affect significantly the crystal structure, phase composition, and electric characteristics of the films. The low dielectric loss and high controllability of planar capacitive elements based on barium titanate–stannate films in the frequency range of 2–60 GHz are demonstrated for the first time.
About the authors
A. V. Tumarkin
St. Petersburg Electrotechnical University LETI
Author for correspondence.
Email: avtumarkin@yandex.ru
Russian Federation, St. Petersburg, 197376
M. V. Zlygostov
St. Petersburg Electrotechnical University LETI
Email: avtumarkin@yandex.ru
Russian Federation, St. Petersburg, 197376
A. G. Gagarin
St. Petersburg Electrotechnical University LETI
Email: avtumarkin@yandex.ru
Russian Federation, St. Petersburg, 197376
A. G. Altynnikov
St. Petersburg Electrotechnical University LETI
Email: avtumarkin@yandex.ru
Russian Federation, St. Petersburg, 197376
E. N. Sapego
St. Petersburg Electrotechnical University LETI
Email: avtumarkin@yandex.ru
Russian Federation, St. Petersburg, 197376
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