Synthesis of Oxygen-Doped Graphitic Carbon Nitride from Thiourea

Abstract

We have synthesized oxygen-doped graphite-like carbon nitride (g-C₃N₄) by the thermal treatment of the thiourea at 450–550°C. With an increase in the annealing temperature, the oxygen concentration in g-C₃N₄ increases, and the band-gap of the material decreases from 2.64 to 2.47 eV. The semiconductor properties of g-C₃N₄ doped with oxygen are confirmed by its high photocatalytic activity, determined by decoloration of a Rhodamine B aqueous solution in the presence of g-C₃N₄ upon irradiation with visible light.