Specific Features of the Luminescence of ZnO:Te/GaN/Al 2 O 3  Heterostructures

A. M. Bagamadova; A. Sh. Asvarov; A. K. Omaev; M. E. Zobov

doi:10.1134/S1063785018120398

Specific Features of the Luminescence of ZnO:Te/GaN/Al₂O₃ Heterostructures

作者: Bagamadova A.M.¹, Asvarov A.S.¹, Omaev A.K.¹, Zobov M.E.¹
隶属关系:
1. Amirkhanov Institute of Physics, Dagestan Scientific Center
期: 卷 44, 编号 12 (2018)
页面: 1142-1144
栏目: Article
URL: https://bakhtiniada.ru/1063-7850/article/view/208128
DOI: https://doi.org/10.1134/S1063785018120398
ID: 208128

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
补充文件
统计

详细

High-quality heteroepitaxial (0001)ZnO:Te/(0001)GaN/(0001)Al₂O₃ structures have been grown by hydrogen vapor-phase epitaxy in a low-pressure continuous flow reactor. X-ray diffraction analysis of these heterostructures has been carried out, which revealed the high structural quality of thin zinc oxide layers. The surface morphology and specific features of UV photoluminescence of the ZnO/GaN/Al₂O₃ heterostructure have been analyzed.