Manufacture and Study of Switch  p – n -Junctions for Cascade Photovoltaic Cells

R. V. Levin; A. E. Marichev; E. V. Kontrosh; N. D. Prasolov; V. S. Kalinovskii; B. V. Pushnyi

doi:10.1134/S1063785018120490

Manufacture and Study of Switch p–n-Junctions for Cascade Photovoltaic Cells

作者: Levin R.V.¹, Marichev A.E.¹, Kontrosh E.V.¹, Prasolov N.D.¹, Kalinovskii V.S.¹, Pushnyi B.V.¹
隶属关系:
1. Ioffe Physical Technical Institute
期: 卷 44, 编号 12 (2018)
页面: 1130-1132
栏目: Article
URL: https://bakhtiniada.ru/1063-7850/article/view/208110
DOI: https://doi.org/10.1134/S1063785018120490
ID: 208110

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
补充文件
统计

详细

Some results of studies on the creation of new junction elements for application in monolithic multijunction InP based photovoltaic cells are presented. A new type of junction elements with a specific ohmic resistance of less than 2 mΩ cm² within a range of current densities of up to 700 A/cm² is presented as an alternative to tunnel junctions.