Amorphous Films of Ternary Zinc and Tin Oxides for Transparent Electronics

Abstract

Amorphous films of two varieties of zinc stannate (ZnSnO₃ and Zn₂SnO₄) have been considered that were fabricated by radio-frequency sputtering of ceramic compound targets containing ZnO and SnO₂ in 1: 1 and 2: 1 ratios. The elemental and phase compositions of the films and their optical and electrical parameters were determined. The transparency of the films in the visible spectral range is on average 87%. Zinc stannate amorphous films have a high electrical conductivity in contrast to amorphous ZnO and SnO₂. This phenomenon, which makes it possible to use zinc stannate amorphous films in transparent and flexible electronics, is explained.