Amorphous Films of Ternary Zinc and Tin Oxides for Transparent Electronics


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Amorphous films of two varieties of zinc stannate (ZnSnO3 and Zn2SnO4) have been considered that were fabricated by radio-frequency sputtering of ceramic compound targets containing ZnO and SnO2 in 1: 1 and 2: 1 ratios. The elemental and phase compositions of the films and their optical and electrical parameters were determined. The transparency of the films in the visible spectral range is on average 87%. Zinc stannate amorphous films have a high electrical conductivity in contrast to amorphous ZnO and SnO2. This phenomenon, which makes it possible to use zinc stannate amorphous films in transparent and flexible electronics, is explained.

作者简介

S. Rembeza

Voronezh State Technical University

Email: rembeza@yandex.ru
俄罗斯联邦, Voronezh

S. Belousov

Voronezh State Technical University

Email: rembeza@yandex.ru
俄罗斯联邦, Voronezh

N. Kosheleva

Voronezh State Technical University

Email: rembeza@yandex.ru
俄罗斯联邦, Voronezh

E. Rembeza

Voronezh State Technical University

编辑信件的主要联系方式.
Email: rembeza@yandex.ru
俄罗斯联邦, Voronezh

T. Svistova

Voronezh State Technical University

Email: rembeza@yandex.ru
俄罗斯联邦, Voronezh

E. Suvaci

Anadolu University

Email: rembeza@yandex.ru
土耳其, Eskişehir

E. Özel

Anadolu University

Email: rembeza@yandex.ru
土耳其, Eskişehir

G. Tuncolu

Anadolu University

Email: rembeza@yandex.ru
土耳其, Eskişehir

C. Açiksari

Anadolu University

Email: rembeza@yandex.ru
土耳其, Eskişehir

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