Clusters of Spikes in CMOS Image Sensors Irradiated by Protons and Neutrons


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Abstract

The distribution of pixels with high-value dark current in CMOS image sensors irradiated by protons with the energy of 1000 MeV and neutrons with a continuous spectrum simulating the energy spectrum of atmospheric neutrons is explored. Data on generation of spike clusters in the irradiated sensors and the exposure time influence on the cluster parameters are obtained.

About the authors

N. A. Ivanov

B.P. Konstantinov Petersburg Nuclear Physics Institute National Research Center “Kurchatov Institute”

Email: ksizova@npcgranat.ru
Russian Federation, Gatchina, Leningrad oblast, 188300

O. V. Lobanov

B.P. Konstantinov Petersburg Nuclear Physics Institute National Research Center “Kurchatov Institute”

Email: ksizova@npcgranat.ru
Russian Federation, Gatchina, Leningrad oblast, 188300

V. V. Pashuk

B.P. Konstantinov Petersburg Nuclear Physics Institute National Research Center “Kurchatov Institute”

Email: ksizova@npcgranat.ru
Russian Federation, Gatchina, Leningrad oblast, 188300

M. O. Prygunov

LLC O2 Svetovye Sistemy

Email: ksizova@npcgranat.ru
Russian Federation, St. Petersburg, 196088

K. G. Sizova

LLC NPC Granat

Author for correspondence.
Email: ksizova@npcgranat.ru
Russian Federation, St. Petersburg, 194021

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