Emission Regimes of 1.06 μm Spectral Bandwidth Two-Sectional Lasers with Quantum Dot Based Active Layer


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

We have investigated two-sectional semiconductor lasers with an active region comprising five layers of InGaAs quantum dots, emitting in the spectral range near 1.06 μm. Regimes of passive mode-locking, passive Q-switching, and mode-locking with pulse modulated amplitude are realized. The transition conditions between generation regimes are investigated. The frequency tuning range with current increase in the Q-switched regime exceeds more than 4 times. The duration of the mode-locked pulses was 2 ps at the pulse repetition rate of 44.3 GHz.

作者简介

I. Gadzhiyev

Ioffe Institute

Email: mikhail.buyalo@gmail.com
俄罗斯联邦, St. Petersburg, 194021

M. Buyalo

Ioffe Institute

编辑信件的主要联系方式.
Email: mikhail.buyalo@gmail.com
俄罗斯联邦, St. Petersburg, 194021

A. Payusov

Ioffe Institute

Email: mikhail.buyalo@gmail.com
俄罗斯联邦, St. Petersburg, 194021

A. Gubenko

Innolume GmbH

Email: mikhail.buyalo@gmail.com
德国, Dortmund

S. Mikhrin

Innolume GmbH

Email: mikhail.buyalo@gmail.com
德国, Dortmund

V. Nevedomsky

Ioffe Institute

Email: mikhail.buyalo@gmail.com
俄罗斯联邦, St. Petersburg, 194021

E. Portnoi

Ioffe Institute

Email: mikhail.buyalo@gmail.com
俄罗斯联邦, St. Petersburg, 194021

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Ltd., 2018