Emission Regimes of 1.06 μm Spectral Bandwidth Two-Sectional Lasers with Quantum Dot Based Active Layer
- 作者: Gadzhiyev I.M.1, Buyalo M.S.1, Payusov A.S.1, Gubenko A.E.2, Mikhrin S.S.2, Nevedomsky V.N.1, Portnoi E.L.1
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隶属关系:
- Ioffe Institute
- Innolume GmbH
- 期: 卷 44, 编号 11 (2018)
- 页面: 965-968
- 栏目: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208014
- DOI: https://doi.org/10.1134/S1063785018110068
- ID: 208014
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详细
We have investigated two-sectional semiconductor lasers with an active region comprising five layers of InGaAs quantum dots, emitting in the spectral range near 1.06 μm. Regimes of passive mode-locking, passive Q-switching, and mode-locking with pulse modulated amplitude are realized. The transition conditions between generation regimes are investigated. The frequency tuning range with current increase in the Q-switched regime exceeds more than 4 times. The duration of the mode-locked pulses was 2 ps at the pulse repetition rate of 44.3 GHz.
作者简介
I. Gadzhiyev
Ioffe Institute
Email: mikhail.buyalo@gmail.com
俄罗斯联邦, St. Petersburg, 194021
M. Buyalo
Ioffe Institute
编辑信件的主要联系方式.
Email: mikhail.buyalo@gmail.com
俄罗斯联邦, St. Petersburg, 194021
A. Payusov
Ioffe Institute
Email: mikhail.buyalo@gmail.com
俄罗斯联邦, St. Petersburg, 194021
A. Gubenko
Innolume GmbH
Email: mikhail.buyalo@gmail.com
德国, Dortmund
S. Mikhrin
Innolume GmbH
Email: mikhail.buyalo@gmail.com
德国, Dortmund
V. Nevedomsky
Ioffe Institute
Email: mikhail.buyalo@gmail.com
俄罗斯联邦, St. Petersburg, 194021
E. Portnoi
Ioffe Institute
Email: mikhail.buyalo@gmail.com
俄罗斯联邦, St. Petersburg, 194021
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