The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET
- Авторы: Abdikarimov A.E.1, Yusupov A.2, Atamuratov A.E.1
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Учреждения:
- Urgench State University
- Tashkent University of Information Technologies
- Выпуск: Том 44, № 11 (2018)
- Страницы: 962-964
- Раздел: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208013
- DOI: https://doi.org/10.1134/S1063785018110020
- ID: 208013
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Аннотация
In this paper, we simulated the dependence of the effect of reducing the drain-induced barrier lowering on the thickness of a buried oxide layer in a finned (vertical) metal-oxide-semiconductor field effect transistor (FinFET) based on silicon-on-insulator technology. Three shapes of the fin with the rectangle, trapezoid, and triangle cross sections were considered. The drain-induced barrier lowering effect significantly depends on both the fin shape and the thickness of the buried oxide layer. The smallest drain-induced barrier lowering effect occurs when the thickness of the buried oxide layer is small for the fin of a triangular shape. This behavior of the drain-induced barrier lowering effect is strongly correlated with the behavior of the parasitic capacitance between a gate and a source.
Об авторах
A. Abdikarimov
Urgench State University
Email: atabek.atamuratov@yahoo.com
Узбекистан, Urgench, 220100
A. Yusupov
Tashkent University of Information Technologies
Email: atabek.atamuratov@yahoo.com
Узбекистан, Tashkent, 100200
A. Atamuratov
Urgench State University
Автор, ответственный за переписку.
Email: atabek.atamuratov@yahoo.com
Узбекистан, Urgench, 220100
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