Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate
- 作者: Aleshkin V.Y.1,2, Baidus N.V.2, Vikhrova O.V.2, Dubinov A.A.1,2, Zvonkov B.N.2, Krasilnik Z.F.1,2, Kudryavtsev K.E.1,2, Nekorkin S.M.2, Novikov A.V.1,2, Rykov A.V.2, Samartsev I.V.2, Yurasov D.V.1,2
-
隶属关系:
- Institute for Physics of Microstuctures
- Lobachevsky State University of Nizhny Novgorod
- 期: 卷 44, 编号 8 (2018)
- 页面: 735-738
- 栏目: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/207842
- DOI: https://doi.org/10.1134/S1063785018080175
- ID: 207842
如何引用文章
详细
A laser structure comprising metamorphic InGaAsP layer and InGaAs quantum wells on a non-inclined Si(001) substrate with relaxed Ge buffer layer has been grown for the first time by metal-organic vapor phase epitaxy (MOVPE). The optically pumped lasers exhibit stimulated emission at a wavelength of 1.3 μm. At liquid-nitrogen temperature, the threshold power density of pumping at 0.8 μm amounted to 250 kW/cm2.
作者简介
V. Aleshkin
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
N. Baidus
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
O. Vikhrova
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Dubinov
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
编辑信件的主要联系方式.
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
B. Zvonkov
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
Z. Krasilnik
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
K. Kudryavtsev
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. Nekorkin
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Novikov
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. Rykov
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
I. Samartsev
Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
D. Yurasov
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
补充文件
