A Study of the Crystal Structure of Co40Fe40B20 Epitaxial Films on a Bi2Te3 Topological Insulator


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Abstract

Laser molecular-beam epitaxy has been used to form Co40Fe40B20 layers on Bi2Te3 topological insulator substrates, and their growth conditions have been studied. The possibility of growing epitaxial ferromagnetic layers on the surface of a topological insulator is demonstrated for the first time. The CoFeB layers have a body-centered cubic crystal structure with the (111) crystal plane parallel to the (0001) plane of Bi2Te3. 3D mapping in the reciprocal space of high-energy electron-diffraction patterns made it possible to determine the epitaxial relationships between the film and the substrate.

About the authors

A. K. Kaveev

Ioffe Physical Technical Institute

Author for correspondence.
Email: kaveev@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

S. M. Suturin

Ioffe Physical Technical Institute

Email: kaveev@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

N. S. Sokolov

Ioffe Physical Technical Institute

Email: kaveev@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

K. A. Kokh

Sobolev Institute of Geology and Mineralogy, Siberian Branch; Novosibirsk State University

Email: kaveev@mail.ioffe.ru
Russian Federation, Novosibirsk, 630058; Novosibirsk, 630058

O. E. Tereshchenko

Novosibirsk State University; Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: kaveev@mail.ioffe.ru
Russian Federation, Novosibirsk, 630058; Novosibirsk, 630058

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