A Study of the Crystal Structure of Co40Fe40B20 Epitaxial Films on a Bi2Te3 Topological Insulator
- Авторы: Kaveev A.K.1, Suturin S.M.1, Sokolov N.S.1, Kokh K.A.2,3, Tereshchenko O.E.3,4
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Учреждения:
- Ioffe Physical Technical Institute
- Sobolev Institute of Geology and Mineralogy, Siberian Branch
- Novosibirsk State University
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Выпуск: Том 44, № 3 (2018)
- Страницы: 184-186
- Раздел: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/207420
- DOI: https://doi.org/10.1134/S1063785018030082
- ID: 207420
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Аннотация
Laser molecular-beam epitaxy has been used to form Co40Fe40B20 layers on Bi2Te3 topological insulator substrates, and their growth conditions have been studied. The possibility of growing epitaxial ferromagnetic layers on the surface of a topological insulator is demonstrated for the first time. The CoFeB layers have a body-centered cubic crystal structure with the (111) crystal plane parallel to the (0001) plane of Bi2Te3. 3D mapping in the reciprocal space of high-energy electron-diffraction patterns made it possible to determine the epitaxial relationships between the film and the substrate.
Об авторах
A. Kaveev
Ioffe Physical Technical Institute
Автор, ответственный за переписку.
Email: kaveev@mail.ioffe.ru
Россия, St. Petersburg, 194021
S. Suturin
Ioffe Physical Technical Institute
Email: kaveev@mail.ioffe.ru
Россия, St. Petersburg, 194021
N. Sokolov
Ioffe Physical Technical Institute
Email: kaveev@mail.ioffe.ru
Россия, St. Petersburg, 194021
K. Kokh
Sobolev Institute of Geology and Mineralogy, Siberian Branch; Novosibirsk State University
Email: kaveev@mail.ioffe.ru
Россия, Novosibirsk, 630058; Novosibirsk, 630058
O. Tereshchenko
Novosibirsk State University; Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: kaveev@mail.ioffe.ru
Россия, Novosibirsk, 630058; Novosibirsk, 630058
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