A Study of the Crystal Structure of Co40Fe40B20 Epitaxial Films on a Bi2Te3 Topological Insulator
- Authors: Kaveev A.K.1, Suturin S.M.1, Sokolov N.S.1, Kokh K.A.2,3, Tereshchenko O.E.3,4
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Affiliations:
- Ioffe Physical Technical Institute
- Sobolev Institute of Geology and Mineralogy, Siberian Branch
- Novosibirsk State University
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Issue: Vol 44, No 3 (2018)
- Pages: 184-186
- Section: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/207420
- DOI: https://doi.org/10.1134/S1063785018030082
- ID: 207420
Cite item
Abstract
Laser molecular-beam epitaxy has been used to form Co40Fe40B20 layers on Bi2Te3 topological insulator substrates, and their growth conditions have been studied. The possibility of growing epitaxial ferromagnetic layers on the surface of a topological insulator is demonstrated for the first time. The CoFeB layers have a body-centered cubic crystal structure with the (111) crystal plane parallel to the (0001) plane of Bi2Te3. 3D mapping in the reciprocal space of high-energy electron-diffraction patterns made it possible to determine the epitaxial relationships between the film and the substrate.
About the authors
A. K. Kaveev
Ioffe Physical Technical Institute
Author for correspondence.
Email: kaveev@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. M. Suturin
Ioffe Physical Technical Institute
Email: kaveev@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. S. Sokolov
Ioffe Physical Technical Institute
Email: kaveev@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
K. A. Kokh
Sobolev Institute of Geology and Mineralogy, Siberian Branch; Novosibirsk State University
Email: kaveev@mail.ioffe.ru
Russian Federation, Novosibirsk, 630058; Novosibirsk, 630058
O. E. Tereshchenko
Novosibirsk State University; Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: kaveev@mail.ioffe.ru
Russian Federation, Novosibirsk, 630058; Novosibirsk, 630058
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