UV-assisted growth of transparent conducting layers based on zinc oxide


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

A comparative study of the microstructure and optical and electrical characteristics of gallium-doped ZnO films synthesized by magnetron sputtering with and without assistance to the growth process by UV radiation has been carried out. It was found that the UV assistance to the growth process of ZnO-based transparent conducting layers improves their electrical characteristics because of the formation of additional donor centers and the lower carrier scattering at grain boundaries, without any strong inf luence on the layer morphology and on the average optical transmittance in the visible spectral range.

作者简介

A. Abduev

Amirkhanov Institute of Physics, Dagestan Scientific Center

Email: cht-if-ran@mail.ru
俄罗斯联邦, Makhachkala, Dagestan, 367003

A. Asvarov

Amirkhanov Institute of Physics, Dagestan Scientific Center

编辑信件的主要联系方式.
Email: cht-if-ran@mail.ru
俄罗斯联邦, Makhachkala, Dagestan, 367003

A. Akhmedov

Amirkhanov Institute of Physics, Dagestan Scientific Center

Email: cht-if-ran@mail.ru
俄罗斯联邦, Makhachkala, Dagestan, 367003

R. Emirov

Dagestan State University

Email: cht-if-ran@mail.ru
俄罗斯联邦, Makhachkala, Dagestan, 367000

V. Belyaev

Moscow Region State University

Email: cht-if-ran@mail.ru
俄罗斯联邦, Moscow, 105005

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Ltd., 2017