UV-assisted growth of transparent conducting layers based on zinc oxide
- 作者: Abduev A.K.1, Asvarov A.S.1, Akhmedov A.K.1, Emirov R.M.2, Belyaev V.V.3
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隶属关系:
- Amirkhanov Institute of Physics, Dagestan Scientific Center
- Dagestan State University
- Moscow Region State University
- 期: 卷 43, 编号 11 (2017)
- 页面: 1016-1019
- 栏目: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/206479
- DOI: https://doi.org/10.1134/S1063785017110153
- ID: 206479
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详细
A comparative study of the microstructure and optical and electrical characteristics of gallium-doped ZnO films synthesized by magnetron sputtering with and without assistance to the growth process by UV radiation has been carried out. It was found that the UV assistance to the growth process of ZnO-based transparent conducting layers improves their electrical characteristics because of the formation of additional donor centers and the lower carrier scattering at grain boundaries, without any strong inf luence on the layer morphology and on the average optical transmittance in the visible spectral range.
作者简介
A. Abduev
Amirkhanov Institute of Physics, Dagestan Scientific Center
Email: cht-if-ran@mail.ru
俄罗斯联邦, Makhachkala, Dagestan, 367003
A. Asvarov
Amirkhanov Institute of Physics, Dagestan Scientific Center
编辑信件的主要联系方式.
Email: cht-if-ran@mail.ru
俄罗斯联邦, Makhachkala, Dagestan, 367003
A. Akhmedov
Amirkhanov Institute of Physics, Dagestan Scientific Center
Email: cht-if-ran@mail.ru
俄罗斯联邦, Makhachkala, Dagestan, 367003
R. Emirov
Dagestan State University
Email: cht-if-ran@mail.ru
俄罗斯联邦, Makhachkala, Dagestan, 367000
V. Belyaev
Moscow Region State University
Email: cht-if-ran@mail.ru
俄罗斯联邦, Moscow, 105005
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