Directional emission from beryllium doped GaAs/AlGaAs nanowires


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Abstract

The emission directionality of self-catalytic GaAs nanowires in an AlGaAs shell, produced by molecular-beam epitaxy with a varied level of beryllium doping, is studied. It is shown that an undoped sample possesses pronounced waveguide properties along the growth direction. With increasing doping level, the intensity of the emission directed perpendicular to the lateral nanowire walls grows.

About the authors

V. G. Talalaev

Martin Luther University; St. Petersburg State University

Email: cirlin@beam.ioffe.ru
Germany, Halle–Wittenberg, Halle; St. Petersburg

I. V. Shtrom

St. Petersburg State University; St. Petersburg Academic University, Russian Academy of Sciences; Ioffe Physical Technical Institute; Institute of Analytical Instrumentation

Email: cirlin@beam.ioffe.ru
Russian Federation, St. Petersburg; St. Petersburg; St. Petersburg; St. Petersburg

Yu. B. Samsonenko

St. Petersburg Academic University, Russian Academy of Sciences; Institute of Analytical Instrumentation

Email: cirlin@beam.ioffe.ru
Russian Federation, St. Petersburg; St. Petersburg

A. I. Khrebtov

St. Petersburg Academic University, Russian Academy of Sciences

Email: cirlin@beam.ioffe.ru
Russian Federation, St. Petersburg

A. D. Bouravleuv

St. Petersburg State University; St. Petersburg Academic University, Russian Academy of Sciences; Ioffe Physical Technical Institute; Institute of Analytical Instrumentation

Email: cirlin@beam.ioffe.ru
Russian Federation, St. Petersburg; St. Petersburg; St. Petersburg; St. Petersburg

G. E. Cirlin

St. Petersburg Academic University, Russian Academy of Sciences; Institute of Analytical Instrumentation; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University); Peter the Great St. Petersburg Polytechnic University

Author for correspondence.
Email: cirlin@beam.ioffe.ru
Russian Federation, St. Petersburg; St. Petersburg; St. Petersburg; St. Petersburg

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