Formation of hexagonal 9R silicon polytype by ion implantation


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Transmission electron-microscopy examination revealed the appearance of a hexagonal silicon (9R polytype) inclusions in the subsrface silicon layer upon ion implantation and subsequent heat treatment of the SiO2/Si structure. The formation of this hexagonal phase is stimulated by mechanical stresses arising in the heterophase system in the course of ion implantation.

作者简介

D. Korolev

Lobachevsky State University of Nizhny Novgorod

Email: tetelbaum@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

A. Nikolskaya

Lobachevsky State University of Nizhny Novgorod

Email: tetelbaum@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

N. Krivulin

Lobachevsky State University of Nizhny Novgorod

Email: tetelbaum@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

A. Belov

Lobachevsky State University of Nizhny Novgorod

Email: tetelbaum@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

A. Mikhaylov

Lobachevsky State University of Nizhny Novgorod

Email: tetelbaum@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

D. Pavlov

Lobachevsky State University of Nizhny Novgorod

Email: tetelbaum@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

D. Tetelbaum

Lobachevsky State University of Nizhny Novgorod

编辑信件的主要联系方式.
Email: tetelbaum@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

N. Sobolev

Ioffe Physical Technical Institute

Email: tetelbaum@phys.unn.ru
俄罗斯联邦, St. Petersburg, 194021

M. Kumar

Indian Institute of Technology Jodhpur

Email: tetelbaum@phys.unn.ru
印度, Jodhpur

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