Formation of hexagonal 9R silicon polytype by ion implantation


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Abstract

Transmission electron-microscopy examination revealed the appearance of a hexagonal silicon (9R polytype) inclusions in the subsrface silicon layer upon ion implantation and subsequent heat treatment of the SiO2/Si structure. The formation of this hexagonal phase is stimulated by mechanical stresses arising in the heterophase system in the course of ion implantation.

About the authors

D. S. Korolev

Lobachevsky State University of Nizhny Novgorod

Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950

A. A. Nikolskaya

Lobachevsky State University of Nizhny Novgorod

Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950

N. O. Krivulin

Lobachevsky State University of Nizhny Novgorod

Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950

A. I. Belov

Lobachevsky State University of Nizhny Novgorod

Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950

A. N. Mikhaylov

Lobachevsky State University of Nizhny Novgorod

Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950

D. A. Pavlov

Lobachevsky State University of Nizhny Novgorod

Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950

D. I. Tetelbaum

Lobachevsky State University of Nizhny Novgorod

Author for correspondence.
Email: tetelbaum@phys.unn.ru
Russian Federation, Nizhny Novgorod, 603950

N. A. Sobolev

Ioffe Physical Technical Institute

Email: tetelbaum@phys.unn.ru
Russian Federation, St. Petersburg, 194021

M. Kumar

Indian Institute of Technology Jodhpur

Email: tetelbaum@phys.unn.ru
India, Jodhpur

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