Formation of hexagonal 9R silicon polytype by ion implantation
- 作者: Korolev D.S.1, Nikolskaya A.A.1, Krivulin N.O.1, Belov A.I.1, Mikhaylov A.N.1, Pavlov D.A.1, Tetelbaum D.I.1, Sobolev N.A.2, Kumar M.3
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隶属关系:
- Lobachevsky State University of Nizhny Novgorod
- Ioffe Physical Technical Institute
- Indian Institute of Technology Jodhpur
- 期: 卷 43, 编号 8 (2017)
- 页面: 767-769
- 栏目: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/205837
- DOI: https://doi.org/10.1134/S1063785017080211
- ID: 205837
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详细
Transmission electron-microscopy examination revealed the appearance of a hexagonal silicon (9R polytype) inclusions in the subsrface silicon layer upon ion implantation and subsequent heat treatment of the SiO2/Si structure. The formation of this hexagonal phase is stimulated by mechanical stresses arising in the heterophase system in the course of ion implantation.
作者简介
D. Korolev
Lobachevsky State University of Nizhny Novgorod
Email: tetelbaum@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Nikolskaya
Lobachevsky State University of Nizhny Novgorod
Email: tetelbaum@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950
N. Krivulin
Lobachevsky State University of Nizhny Novgorod
Email: tetelbaum@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Belov
Lobachevsky State University of Nizhny Novgorod
Email: tetelbaum@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Mikhaylov
Lobachevsky State University of Nizhny Novgorod
Email: tetelbaum@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950
D. Pavlov
Lobachevsky State University of Nizhny Novgorod
Email: tetelbaum@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950
D. Tetelbaum
Lobachevsky State University of Nizhny Novgorod
编辑信件的主要联系方式.
Email: tetelbaum@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950
N. Sobolev
Ioffe Physical Technical Institute
Email: tetelbaum@phys.unn.ru
俄罗斯联邦, St. Petersburg, 194021
M. Kumar
Indian Institute of Technology Jodhpur
Email: tetelbaum@phys.unn.ru
印度, Jodhpur
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