Formation of hexagonal 9R silicon polytype by ion implantation

D. S. Korolev; A. A. Nikolskaya; N. O. Krivulin; A. I. Belov; A. N. Mikhaylov; D. A. Pavlov; D. I. Tetelbaum; N. A. Sobolev; M. Kumar

doi:10.1134/S1063785017080211

Formation of hexagonal 9R silicon polytype by ion implantation

作者: Korolev D.S.¹, Nikolskaya A.A.¹, Krivulin N.O.¹, Belov A.I.¹, Mikhaylov A.N.¹, Pavlov D.A.¹, Tetelbaum D.I.¹, Sobolev N.A.², Kumar M.³
隶属关系:
1. Lobachevsky State University of Nizhny Novgorod
2. Ioffe Physical Technical Institute
3. Indian Institute of Technology Jodhpur
期: 卷 43, 编号 8 (2017)
页面: 767-769
栏目: Article
URL: https://bakhtiniada.ru/1063-7850/article/view/205837
DOI: https://doi.org/10.1134/S1063785017080211
ID: 205837

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Transmission electron-microscopy examination revealed the appearance of a hexagonal silicon (9R polytype) inclusions in the subsrface silicon layer upon ion implantation and subsequent heat treatment of the SiO₂/Si structure. The formation of this hexagonal phase is stimulated by mechanical stresses arising in the heterophase system in the course of ion implantation.