Specific features of motion of molten zones in the field of silicon structural inhomogeneity


Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

The formation and dynamics of molten Al–Si inclusions in silicon at temperatures of 1123–1273 K in the dislocation-density gradient field are investigated. It is established that the molten inclusion moves as a whole in accordance with the melting–crystallization mechanism: dissolution is observed at the front boundary in the region with a higher dislocation concentration and crystallization and on the back surface in the region with a lower one. The migration rates and activation energies are experimentally determined. It is demonstrated that the inclusion migration is limited by the melting–crystallization processes at the interfaces between the melt and matrix.

About the authors

A. A. Skvortsov

Moscow Polytechnic University

Author for correspondence.
Email: SkvortsovAA2009@yandex.ru
Russian Federation, Moscow, 107023

S. M. Zuev

Moscow Polytechnic University

Email: SkvortsovAA2009@yandex.ru
Russian Federation, Moscow, 107023

M. V. Koryachko

Moscow Polytechnic University

Email: SkvortsovAA2009@yandex.ru
Russian Federation, Moscow, 107023

E. B. Voloshinov

Moscow Polytechnic University

Email: SkvortsovAA2009@yandex.ru
Russian Federation, Moscow, 107023

Supplementary files

Supplementary Files
Action
1. JATS XML

Copyright (c) 2017 Pleiades Publishing, Ltd.