Deposition of stoichiometric Bi2Se3 film by vacuum-thermal treatment of Se/Bi heterostructure


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Abstract

The possibility of obtaining a stoichiometric Bi2Se3 film by vacuum-thermal treatment of a Se/Bi heterostructure is demonstrated for the first time. It was found that a stoichiometric Bi2Se3 film can be only produced at a certain ratio of the Se and Bi film thicknesses (dSe/dBi = 3.13). X-ray-diffraction analysis and Raman spectroscopy were used to study the phase transformations in a Se(141 nm)/Bi(45 nm) heterostructure upon its thermal treatment in a vacuum. The phase transition temperatures at which various crystalline phases are formed were determined. It is shown that Bi2Se3 crystallizes in the Se(141 nm)/Bi(45 nm) heterostructure heated to 493 K in conformity with an exponential law, with a characteristic time in which the equilibrium state is attained equal to 20 min.

About the authors

V. Ya. Kogai

Institute of Mechanics, Ural Branch

Author for correspondence.
Email: vkogai@udman.ru
Russian Federation, Izhevsk, Udmurtia, 426067

K. G. Mikheev

Institute of Mechanics, Ural Branch

Email: vkogai@udman.ru
Russian Federation, Izhevsk, Udmurtia, 426067

G. M. Mikheev

Institute of Mechanics, Ural Branch

Email: vkogai@udman.ru
Russian Federation, Izhevsk, Udmurtia, 426067

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