Deposition of stoichiometric Bi2Se3 film by vacuum-thermal treatment of Se/Bi heterostructure
- Authors: Kogai V.Y.1, Mikheev K.G.1, Mikheev G.M.1
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Affiliations:
- Institute of Mechanics, Ural Branch
- Issue: Vol 43, No 8 (2017)
- Pages: 701-704
- Section: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/205561
- DOI: https://doi.org/10.1134/S1063785017080107
- ID: 205561
Cite item
Abstract
The possibility of obtaining a stoichiometric Bi2Se3 film by vacuum-thermal treatment of a Se/Bi heterostructure is demonstrated for the first time. It was found that a stoichiometric Bi2Se3 film can be only produced at a certain ratio of the Se and Bi film thicknesses (dSe/dBi = 3.13). X-ray-diffraction analysis and Raman spectroscopy were used to study the phase transformations in a Se(141 nm)/Bi(45 nm) heterostructure upon its thermal treatment in a vacuum. The phase transition temperatures at which various crystalline phases are formed were determined. It is shown that Bi2Se3 crystallizes in the Se(141 nm)/Bi(45 nm) heterostructure heated to 493 K in conformity with an exponential law, with a characteristic time in which the equilibrium state is attained equal to 20 min.
About the authors
V. Ya. Kogai
Institute of Mechanics, Ural Branch
Author for correspondence.
Email: vkogai@udman.ru
Russian Federation, Izhevsk, Udmurtia, 426067
K. G. Mikheev
Institute of Mechanics, Ural Branch
Email: vkogai@udman.ru
Russian Federation, Izhevsk, Udmurtia, 426067
G. M. Mikheev
Institute of Mechanics, Ural Branch
Email: vkogai@udman.ru
Russian Federation, Izhevsk, Udmurtia, 426067
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