Quantum efficiency of 4H-SiC detectors within the range of 114–400 nm


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Abstract

Electrical and spectrometric characteristics of 4H-SiC detectors with Cr Schottky barriers in the spectral ranges of 114–175 and 210–400 nm are studied. It is demonstrated that the quality of commercially available 4H-SiC layers is sufficient to construct UV radiation detectors with their external quantum efficiency exceeding 20% in the studied spectral ranges.

About the authors

E. V. Kalinina

Ioffe Physical Technical Institute

Author for correspondence.
Email: evk@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

G. N. Violina

St. Petersburg Electrotechnical University (LETI)

Email: evk@mail.ioffe.ru
Russian Federation, St. Petersburg, 197376

V. P. Belik

Ioffe Physical Technical Institute

Email: evk@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

A. V. Nikolaev

Ioffe Physical Technical Institute

Email: evk@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

V. V. Zabrodskii

Ioffe Physical Technical Institute

Email: evk@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

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