Quantum efficiency of 4H-SiC detectors within the range of 114–400 nm
- Authors: Kalinina E.V.1, Violina G.N.2, Belik V.P.1, Nikolaev A.V.1, Zabrodskii V.V.1
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Affiliations:
- Ioffe Physical Technical Institute
- St. Petersburg Electrotechnical University (LETI)
- Issue: Vol 42, No 10 (2016)
- Pages: 1057-1059
- Section: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/201832
- DOI: https://doi.org/10.1134/S1063785016100229
- ID: 201832
Cite item
Abstract
Electrical and spectrometric characteristics of 4H-SiC detectors with Cr Schottky barriers in the spectral ranges of 114–175 and 210–400 nm are studied. It is demonstrated that the quality of commercially available 4H-SiC layers is sufficient to construct UV radiation detectors with their external quantum efficiency exceeding 20% in the studied spectral ranges.
About the authors
E. V. Kalinina
Ioffe Physical Technical Institute
Author for correspondence.
Email: evk@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
G. N. Violina
St. Petersburg Electrotechnical University (LETI)
Email: evk@mail.ioffe.ru
Russian Federation, St. Petersburg, 197376
V. P. Belik
Ioffe Physical Technical Institute
Email: evk@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. V. Nikolaev
Ioffe Physical Technical Institute
Email: evk@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. V. Zabrodskii
Ioffe Physical Technical Institute
Email: evk@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
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