电邮这篇文章 Electron heat conductivity of epitaxial graphene on silicon carbide
- 作者: Alisultanov Z.Z.1,2,3, Meilanov R.P.4
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隶属关系:
- Amirkhanov Institute of Physics, Dagestan Scientific Center
- Prokhorov General Physics Institute
- Dagestan State University
- Institute of Geothermal Problems, Dagestan Scientific Center
- 期: 卷 42, 编号 8 (2016)
- 页面: 779-782
- 栏目: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/200358
- DOI: https://doi.org/10.1134/S1063785016080022
- ID: 200358
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详细
The diagonal component of the electron heat conductivity tensor of epitaxial graphene formed in a semiconductor has been investigated within a simple analytical model. It is shown that the heat conductivity sharply changes at a chemical potential close to the substrate band gap edge. Low-temperature expressions for the heat conductivity are derived.
作者简介
Z. Alisultanov
Amirkhanov Institute of Physics, Dagestan Scientific Center; Prokhorov General Physics Institute; Dagestan State University
编辑信件的主要联系方式.
Email: zaur0102@gmail.com
俄罗斯联邦, Makhachkala, Dagestan, 367003; Moscow, Dagestan, 119991; Makhachkala, Dagestan, 367000
R. Meilanov
Institute of Geothermal Problems, Dagestan Scientific Center
Email: zaur0102@gmail.com
俄罗斯联邦, Makhachkala, Dagestan, 367030
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