The thermovoltaic effect in variband solid solution Si 1– x  Ge  x   (0 ≤  x  ≤ 1)

A. S. Saidov; A. Yu. Leyderman; A. B. Karshiev

doi:10.1134/S1063785016070270

The thermovoltaic effect in variband solid solution Si_1–xGe_x (0 ≤ x ≤ 1)

Autores: Saidov A.S.¹, Leyderman A.Y.¹, Karshiev A.B.¹
Afiliações:
1. Physicotechnical Institute, Solar Physics Research and Production Corporation
Edição: Volume 42, Nº 7 (2016)
Páginas: 725-728
Seção: Article
URL: https://bakhtiniada.ru/1063-7850/article/view/200055
DOI: https://doi.org/10.1134/S1063785016070270
ID: 200055

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The thermovoltaic effect in films of variband solid solution Si_1–xGe_x (0 ≤ x ≤ 1) has been observed for the first time. The samples comprised n-Si–p-Si_1–xGe_x (0 ≤ x ≤ 1) heterostructures grown by liquid phase epitaxy. An electromotive force within 0.05–0.3 mV and a current of 0.0025–0.0035 μA appeared on heating samples in a temperature range from 40 to 250°C.